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profet ? BTS409L1 semiconductor group 1 12.96 smart highside power switch features overload protection current limitation short circuit protection thermal shutdown overvoltage protection (including load dump) fast demagnetization of inductive loads reverse battery protection 1 ) undervoltage and overvoltage shutdown with auto-restart and hysteresis open drain diagnostic output open load detection in on-state cmos compatible input loss of ground and loss of v bb protection e lectro s tatic d ischarge ( esd ) protection application m c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads all types of resistive, inductive and capacitve loads replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions. + v bb in st signal gnd esd profet a out gnd logic voltage sensor voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection gnd r o open load detection short to vbb 1 ) with external current limit (e.g. resistor r gnd =150 w ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb ( az ) 43 v operating voltage v bb ( on ) 5.0 ... 34 v on-state resistance r on 200 m w load current (iso) i l ( iso ) 2.3 a current limitation i l ( scr ) 4a to-220ab/5 5 standard 1 5 straight leads 1 5 smd
BTS409L1 semiconductor group 2 pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3) v bb 43 v suppl y volta g e for full short circuit protection t j start =-40 ...+150c v bb 34 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 w , r l = 5.3 w , t d = 200 ms, in= low or high v load dump 4 ) 60 v load current (short circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 18 w inductive load switch-off ener gy dissipation, sin g le pulse v bb = 12v, t j, start = 150c, t c = 150c const. i l = 2.3 a, z l = 98 mh, 0 w : e as 335 mj electrostatic dischar g e capabilit y ( esd ) in: ( human bod y model ) all other pins: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 v esd 1.0 2.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6 i in i st 2.0 5.0 ma thermal characteristics parameter and conditions s y mbol values unit min typ max thermal resistance chip - case: junction - ambient (free air): r thjc r thja -- -- -- -- 7 75 k/w smd version, device on pcb 5) :39 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 w resistor in the gnd connection and a 15 k w resistor in series with the status pin. a resistor for the protection of the input is integrated. 3) r i = internal resistance of the load dump test pulse generator 4) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.
BTS409L1 semiconductor group 3 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 1.8 a t j =25 c: t j =150 c: r on -- 160 320 200 400 m w nominal load current, iso norm ( pin 3 to 5 ) v on = 0.5 v, t c = 85 c i l(iso) 1.8 2.3 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 7 i l(gndhigh) -- -- 10 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 w , t j =-40...+150c t on t off 80 80 200 200 400 400 m s slew rate on 10 to 30% v out , r l = 12 w , t j =-40...+150c d v /dt on 0.1 -- 1 v/ m s slew rate off 70 to 40% v out , r l = 12 w , t j =-40...+150c -d v /dt off 0.1 -- 1 v/ m s operating parameters operating voltage 6 ) t j =-40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c: v bb(under) 3.5 -- 5.0 v undervolta g e restart t j =-40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervolta g e restart of char g e pump see diagram page 11 t j =-40...+150c: v bb(ucp) -- 5.6 7.0 v undervolta g e h y steresis d v bb(under) = v bb(u rst) - v bb(under) d v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j =-40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c: d v bb(over) -- 0.5 -- v overvoltage protection 7 ) t j =-40...+150c: i bb =40 ma v bb(az) 42 47 -- v standby current (pin 3) v in =0 t j =-40...+25c : t j = 150c: i bb(off) -- -- 10 12 23 28 m a leakage output current (included in i bb ( off ) ) v in =0 i l(off) -- -- 12 m a 6) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7) see also v on(cl) in table of protection functions and circuit diagram page 7.
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group 4 operating current (pin 1) 8) , v in =5 v, t j =-40...+150c i gnd -- 1.8 3.5 ma protection functions initial peak short circuit current limit (pin 3 to 5) i l(scp) t j =-40c: t j =25c: t j =+150c: 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 9) -- 4 -- a output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 47 53 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k reverse battery (pin 3 to 1) 9 ) - v bb -- -- 32 v diagnostic characteristics open load detection current t j =-40 c : (on-condition) t j =25 ..150c: i l (ol) 10 10 -- -- 200 150 ma open load detection voltage 10 ) (off-condition) t j =-40..150c: v out(ol) 234v internal output pull down (pin 5 to 1), v out =5 v, t j =-40..150c r o 41030k w 8 ) add i st , if i st > 0, add i in , if v in >5.5 v 9 ) requires 150 w resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) external pull up resistor required for open load detection in off state.
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group 5 input and status feedback 11 ) input resistance see circuit page 6 r i 2.5 3.5 6 k w input turn-on threshold voltage
BTS409L1 semiconductor group 6 truth table input- output status level level normal operation l h l h h h open load l h 12 ) h h (l 13 ) ) l short circuit to v bb l h h h l 14 ) h (l 15 ) ) overtem- perature l h l l h l under- voltage l h l l h h overvoltage l h l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 10...11) 12 ) power transistor off, high impedance 13 ) with external resistor between pin 3 and pin 5 14) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 15 ) low resistance to v bb may be detected in on-state by the no-load-detection terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r esd-zd i i i esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5 ma; r st(on) < 380 w at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ.
BTS409L1 semiconductor group 7 overvolt. and reverse batt. protection + v bb in st st r in r gnd gnd r signal gnd logic profet v z2 i r v z1 v z1 = 6.2 v typ., v z2 = 47 v typ., r gnd = 150 w , r st = 15 k w , r i = 3.5 k w typ. open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on off-state diagnostic condition: v out > 3 v typ.; in low open load detection logic unit v out signal gnd r ext r o off gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high normal load current can be handled by the profet itself.
BTS409L1 semiconductor group 8 v bb disconnect with charged external inductive load profet v in st out gnd bb 1 2 4 3 5 v bb high s d if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load l r l { z l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 w : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 w l [mh] 1 10 100 1000 10000 12345 i l [a] transient thermal impedance chip case z thjc = f (t p )z thjc [k/w] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 1e2 0 0.01 0.02 0.05 0.1 0.2 0.5 d= t p [s]
BTS409L1 semiconductor group 9 timing diagrams figure 1a: v bb turn on: in v out t v bb st open drain proper turn on under all conditions figure 2a: switching a lamp, in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: short circuit shut down by overtempertature, reset by cooling in st l t i l(scr) i i l(scp) heating up may require several milliseconds, depending on external conditions
BTS409L1 semiconductor group 10 figure 4a: overtemperature: reset if t j < t jt in st out j t v t figure 5a: open load: detection in on-state, turn on/off to open load in st out l t v i open t d(st) t d(st ol4) the status delay time t d(st ol4) allows to ditinguish between the failure modes "open load" and "overtemperature". figure 5b: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol1) t d(st ol2) t d(st ol1) = 30 m s typ., t d(st ol2) = 20 m s typ figure 5c: open load: detection in on- and off-state (with r ext ), turn on/off to open load in st out l t v i open t d(st)
BTS409L1 semiconductor group 11 figure 6a: undervoltage: in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state charge pump starts at v bb(ucp) =5.6 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst)
BTS409L1 semiconductor group 12 package and ordering code all dimensions in mm standard to-220ab/5 ordering code BTS409L1 q67060-s6107-a2 to-220ab/5, option e3043 ordering code BTS409L1 e3043 q67060-s6107-a3 smd to-220ab/5, opt. e3062 ordering code BTS409L1 e3062a t&r: q67060-s6107-a4 changed since 04.96 date change dec z th specification added 1996 t d ( st ol4 ) max reduced from 1500 to 800 s esd capability increased e as maximum ratin g and dia g ram added components used in life-support devices or systems must be expressly authorised for such purpose! critical components 16 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 17 ) with the express written approval of the semiconductor group of siemens ag. 16) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 17) life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

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